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inchange semiconductor product specification silicon npn power transistors 2SD1037 description ? ? with mt-200 package ? excellent safe operating area ? high current capability applications ?for electrical supply ,dc-dc converters and low frequency power amplifier applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25c) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 6 v i c collector current 30 a p c collector power dissipation t c =25 ?? 180 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1037 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 120 v v cesat collector-emitter saturation voltage i c =10 a;i b =1 a 0.5 v v besat base-emitter saturation voltage i c =10 a;i b =1 a 1.5 v i cbo collector cut-off current v cb =80v; i e =0 5 | a i ebo emitter cut-off current v eb =6v; i c =0 5 | a h fe dc current gain i c =10a ; v ce =4v 20 f t transition frequency i c =1a ; v ce =4v 1.5 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 210 pf
inchange semiconductor product specification 3 silicon npn power transistors 2SD1037 package outline fig.2 outline dimensions

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